Electronic bandgap and exciton binding energy of layered semiconductor TiS3

Abstract

We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature.

24 pages, 10 figures

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Cited by in corpus (12)

• Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
• Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties
• Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials
• Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets
• Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction
• High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors
• Large birefringence and linear dichroism in TiS3 nanosheets
• Large Exciton Binding Energy in the Bulk van der Waals Magnet CrSBr
• Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications
• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Transition from band insulator to excitonic insulator via alloying Se into Monolayer TiS${}_3$: A Computational Study
• Optical properties of TiS${}_3$ as a novel thin film for single-junction and tandem solar cells