Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates
arXiv:1407.2202 · doi:10.1063/1.4892650
Abstract
We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.
arXiv comment10 pages, 4 figures
References in corpus (17)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Local strain engineering in atomically thin MoS2
- Elastic properties of freely suspended MoS2 nanosheets
- High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
- Origin of Spatial Charge Inhomogeneity in Graphene
- Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Elastic Bending Modulus of Monolayer Graphene
- Optical identification of atomically thin dichalcogenide crystals
- Elastic Bending Modulus of Single-Layer Molybdenum Disulphide (MoS2): Finite Thickness Effect
- Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2
- Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
- Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene
- Spatially resolved electronic inhomogeneities of graphene due to subsurface charges
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