66 citations · 83 across the 3 of their papers we have counts for
5 papers
The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors
Jorge Quereda, Jan Hidding, Talieh S. Ghiasi +3
Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcoge…
Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy
Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez +6
We investigate excitonic transitions in a h-BN encapsulated monolayer phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra…
Semiconductor channel mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors
Jorge Quereda, Talieh S. Ghiasi, Caspar H. van der Wal +1
In optically excited two-dimensional phototransistors, charge transport is often affected by photodoping effects. Recently, it was shown that such effects are especially strong and…
Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
Jorge Quereda, Juan José Palacios, Nicolás Agräit +2
We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip…
Enhanced superconductivity in atomically thin TaS2
Efrén Navarro-Moratalla, Joshua O. Island, Samuel Mañas-Valero +11
The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties…