Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3
arXiv:1610.05505 · doi:10.1002/adom.201600365
Abstract
The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors.
arXiv comment3 Figures + 6 Supp. Info. figures
References in corpus (12)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Black phosphorus field-effect transistors
- Single-Layer MoS2 Phototransistors
- Two-Dimensional Material Nanophotonics
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions
- Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
- Solar-energy conversion and light emission in an atomic monolayer p-n diode
- Black phosphorus: narrow gap, wide applications
- Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
- Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging
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