Opto-electronic properties of alpha-In2Se3: single-layer to bulk

Abstract

In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio density functional theory calculations, including bandstructures and G0W0 calculations.

10 pages, 7 figures

References in corpus (6)

• Advanced capabilities for materials modelling with Quantum ESPRESSO
• High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
• Out-of-plane Piezoelectricity and Ferroelectricity in Layered $\alpha$-In2Se3 Nano-flakes
• Nonlinear twistoptics at symmetry-broken interfaces
• Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3
• Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Cited by in corpus (1)

• Many-body description of two-dimensional van der Waals ferroelectric $\alpha -$In${}_2$Se${}_3$