Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

Abstract

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.

arXiv comment4 figures + 3 supp.info. figures

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• Thickness identification of thin InSe by optical microscopy methods
• Optical-based thickness measurement of MoO${}_3$ nanosheets
• Lithography-free electrical transport measurements on 2D materials by direct microprobing
• Biaxial strain tuning of excitons in monolayer MoSe${}_2$ by high-temperature physical vapor deposition