Jorge Quereda

activity

20162025

most citedStrain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

66 citations · 98 across the 6 of their papers we have counts for

collaborators

Showing 2018Show all

2 papers · 1 filter

cond-mat.mes-hall2018

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $MoS e_{2}$ Field-Effect Transistors

Talieh S. Ghiasi, Jorge Quereda, Bart J. van Wees

The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical c…

cond-mat.mtrl-sci2018

Symmetry regimes for circular photocurrents in monolayer MoSe2

Jorge Quereda, Talieh S. Ghiasi, Jhih-Shih You +3

In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic…

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer MoSe2​ Field-Effect Transistors

Symmetry regimes for circular photocurrents in monolayer MoSe2

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $MoS e_{2}$ Field-Effect Transistors