Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts
arXiv:1503.07392 · doi:10.1109/IEDM.2014.7046987
Abstract
The metal contacts on 2D black phosphorus field-effect transistor and photodetectors are studied. The metal work functions can significantly impact the Schottky barrier at the metal-semiconductor contact in black phosphorus devices. Higher metal work functions lead to larger output hole currents in p-type transistors, while ambipolar characteristics can be observed with lower work function metals. Photodetectors with record high photoresponsivity (223 mA/W) are demonstrated on black phosphorus through contact-engineering.
4 Pages
References in corpus (6)
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Black phosphorus field-effect transistors
- Phosphorene: A New 2D Material with High Carrier Mobility
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors