1.5k citations · 6.6k across the 19 of their papers we have counts for
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cond-mat.mtrl-sci2012★ 815 cited
Channel Length Scaling of MoS2 MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We…
cond-mat.mes-hall2012★ 113 cited
MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
Han Liu, Jiangjiang Gu, Peide Ye
We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 μm down to 60 nm. We reveal that the channel conductance s…
cond-mat.mes-hall2012★ 172 cited
The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
Han Liu, Kun Xu, Xujie Zhang +1
We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). W…