Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

Abstract

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

arXiv comment19 pages, 4 figures, accepted by Nano Letters, forthcoming

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Cited by in corpus (10)

• Realization of a vertical topological p-n junction in epitaxial $\mathrm{S}{\mathrm{b}}_2\mathrm{T}{\mathrm{e}}_3/B{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_3$ heterostructures
• Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators
• Characterizing the Structure of Topological Insulator Thin Films
• Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance
• Electrical detection of spin-polarized current in topological insulator Bi1.5Sb0.5Te1.7Se1.3
• Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films
• Quasiparticle Interference Patterns in a Topological Superconductor
• Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime
• Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators
• An ab initio investigation of Bi${}_2$Se${}_3$ topological insulator deposited on amorphous SiO${}_2$