Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate

Abstract

Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on α-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.

5 pages, 4 figures

References in corpus (8)

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• Quantum Spin Hall Insulator State in HgTe Quantum Wells
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• Exciton condensation and charge fractionalization in a topological insulator film
• Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit

Cited by in corpus (25)

• Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
• Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
• Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films
• Quantum Anomalous Hall Effect in Time-Reversal-Symmetry Breaking Topological Insulators
• Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3
• Current induced anisotropic magnetoresistance in topological insulator films
• Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films
• Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure
• Crossover of Ising- to Rashba-Type Superconductivity in Epitaxial Bi2Se3/Monolayer NbSe2 Heterostructures
• Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy
• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
• Breaking time reversal symmetry in topological insulators
• High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell
• Experimental Proof of Universal Conductance Fluctuation in Quasi-1D Epitaxial Bi${}_2$Se${}_3$ Wires
• Magnetotransport in Bi${}_2$Se${}_3$ thin films epitaxially grown on Ge(111)
• Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators
• Van der Waals epitaxial growth of topological insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica
• Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films
• Electron and Hole Injection via Charge Transfer at the Topological-Insulator $B{i}_{2-x}S{b}_{x}T{e}_{3-y}S{e}_y$/Organic-Molecule Interface
• Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/Al${}_2$O${}_3$
• Topological superconductivity in an ultrathin, magnetically-doped topological insulator proximity coupled to a conventional superconductor
• From classical to quantum regime of topological surface states via defect engineering
• Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6
• Magnetoexcitons and optical absorption of bilayer-structured topological insulators
• Nonresonant Casimir-Polder repulsion with a monolayer topological insulator