Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films
arXiv:1509.06608 · doi:10.1007/s11433-015-5761-9
Abstract
High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2-xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2-xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.
13 pages, 4 figures, invited research article for Science China (Physics, Mechanics & Astronomy). This paper gives the story behind QAH effect. Comments are welcomed
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- Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
- Evolution of Dopant-Concentration-Induced Magnetic Exchange Interaction in Topological Insulator Thin Films
- From classical to quantum regime of topological surface states via defect engineering
- Relationship among Structural, Disordered, Magnetism and Band Topology in MnSb2Te4(Sb2Te3)n Family