High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell

Abstract

Here we report a method to fabricate high quality Bi2Se3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With rates close to exact stoichiometry, optimal layer-by-layer growth of high quality Bi2Se3 thin films with smooth surfaces, has been achieved on CaF2(111) substrates and Si(111) substrates with a thin CaF2 buffer layer(CaF2/Si). Transport measurements show a characteristic weak antilocalization mangnetoresistance, with emergence of weak localization in the ultrathin film limit. Quantum Oscillations attributed to the topological surface states have been observed, including in films on CaF2/Si.

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Cited by in corpus (6)

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• Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface
• Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3
• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
• Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
• MOCVD synthesis of compositionally tuned topological insulator nanowires