MOCVD synthesis of compositionally tuned topological insulator nanowires

Abstract

Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions.

References in corpus (10)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
• Enhanced Thermoelectric Performance and Anomalous Seebeck Effects in Topological Insulators
• Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot
• Photon Emission from a Cavity-Coupled Double Quantum Dot
• Stability of Majorana Fermions in Proximity-Coupled Topological Insulator Nanowires
• Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se