Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition

Abstract

We characterize nanostructures of Bi2Se3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 microns long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mOhm-cm. We observe weak anti-localization and extract a phase coherence length l_phi = 178 nm and spin-orbit length l_so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

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• Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures
• Phase-coherent transport in catalyst-free vapor phase deposited Bi${}_2$Se${}_3$ crystals
• MOCVD synthesis of compositionally tuned topological insulator nanowires
• Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures
• Magnetic Order in 3D Topological Insulators -- Wishful Thinking or Gateway to Emergent Quantum Effects?
• Ultrafast Spectroscopy of Bi2Se3 Topological Insulator
• Universal Conductance Fluctuations of Topological Insulators
• Sb2Se3 and SbBiSe3 Surface Capping and Biaxial Strain Co-Engineering for Tuning the Surface Electronic Properties of Bi2Se3 Nanosheet- A Density Functional Theory based Investigation