Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons

Abstract

A topological insulator is a new state of matter, possessing gapless spin-locking surface states across the bulk band gap which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state via electron transport measurement. Here we report surface state dominated transport in Sb-doped Bi2Se3 nanoribbons with very low bulk electron concentrations. In the nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate complete control of their top and bottom surfaces near the Dirac point, achieving the lowest carrier concentration of 2x10^11/cm2 reported in three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.

5 pages, 4 figures, 1 table

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Cited by in corpus (66)

• Topological Insulator Materials
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• Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
• Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
• Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
• Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
• Surface dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te1.8Se1.2
• One-dimensional helical transport in topological insulator nanowire interferometers
• Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3
• Symmetry Protected Josephson Supercurrents in Three-Dimensional Topological Insulators
• Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
• Superconducting diode effect due to magnetochiral anisotropy in topological insulator and Rashba nanowires
• Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy
• Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals
• Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition
• Topological insulators from the Perspective of first-principles calculations
• First-principles studies of multiferroic and magnetoelectric materials
• 2D transport and screening in topological insulator surface states
• Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
• Quantum confinement of the Dirac surface states in topological-insulator nanowires
• Thermoelectric performance of classical topological insulator nanowires
• Current-phase relation for Josephson effect through helical metal
• Topological Crystalline Insulator Nanostructures
• Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons
• Resonance-type thickness dependence of optical second harmonic generation in thin-films of the topological insulator Bi2Se3
• Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
• Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films
• Majorana bound states in topological insulators without a vortex
• Gate-tunable transport properties of in-situ capped Bi${}_2$Te${}_3$ topological insulator thin films
• Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets
• Resolving the Dirac Cone on the Surface of Bi2Te3 Topological Insulator Nanowires by Field-Effect Measurements
• Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3
• Two-dimensional electronic transport on the surface of 3D topological insulators
• Dirac Fermions and Superconductivity in Homologous Structures (AgxPb1-xSe)5(Bi2Se3)3m,m = 1,2
• Towards the manipulation of topological states of matter: A perspective from electron transport
• Interaction and disorder effects in 3D topological insulator thin films
• Magnetotransport signatures of three-dimensional topological insulator nanostructures
• Hot-carrier transport and spin relaxation on the surface of topological insulator
• Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons
• Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators
• Metallization and proximity superconductivity in topological insulator nanowires
• Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures
• Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers
• Band tilt induced nonlinear Nernst effect in topological insulators: An efficient generation of high-performance spin polarization
• Disorder effects in topological insulator nanowires
• Substrate-Independent Catalyst-Free Synthesis of High-Purity Bi2Se3 Nanostructures
• Finite-size effects in cylindrical topological insulators
• Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons
• Dynamic Opening of a Gap in Dirac Surface States of the Thin-Film 3D Topological Insulator Bi2Se3 Driven by the Dynamic Rashba Effect
• Multiple Andreev reflections in topological insulator nanoribbons
• Electronic properties of one-dimensional nanostructures of the Bi${}_2$Se${}_3$ topological insulator
• Designer topological insulator with enhanced gap and suppressed bulk conduction in Bi2Se3/Sb2Te3 ultra-short period superlattices
• From classical to quantum regime of topological surface states via defect engineering
• Topological Effect of Surface Plasmon Excitation in Gapped Isotropic Topological Insulator Nanowires
• Band Structure and Polarization Effects in Photothermoelectric Spectroscopy of a Bi2Se3 Device
• Magneto transport and first principle study of strong topological insulator gray Arsenic
• Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States
• Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration
• Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects
• Gate Tunable Relativistic Mass and Berry${}^{\prime }$s phase in Topological Insulator Nanoribbon Field Effect Devices
• Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit
• Spin Generation Via Bulk Spin Current in Three Dimensional Topological Insulators
• Terahertz electro-optic effect in Bi${}_2$Se${}_3$ crystals
• Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction
• Sb doping effect on transport behavior in the topological insulator Bi2Se3