Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers

Abstract

In this work, we use charge extraction via organic overlayer deposition to lower the chemical potential of topological insulator Bi2Se3 thin films into the intrinsic (bulk-insulating) regime. We demonstrate the tuning and stabilization of intrinsic topological insulators at high mobility with low-cost organic films. With the protection of the organic charge extraction layers tetrafluorotetracyanoquinodimethane(F4TCNQ) or tris(acetylacetonato)cobalt(III) (Co(acac)3), the sample is stable in the atmosphere with chemical potential ~135 meV above the Dirac point (85 meV below the conduction band minimum, well within the topological insulator regime) after four months, which is an extraordinary level of environmental stability. The Co complex represents the first use of an organometallic for modulating TI charge density. The mobility of surface state electrons is enhanced as high as ~2000 cm2/Vs. Even at room temperature, a true topologically insulating state is realized and stabilized for months' exposure to the atmosphere.

Applied Physics Letters, To appear, 4 figures

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• Single electron gating of topological insulators
• A compact broadband terahertz range quarter-wave plate
• From classical to quantum regime of topological surface states via defect engineering
• Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime