Systematics of molecular self-assembled networks at topological insulators surfaces
arXiv:1503.03235 · doi:10.1021/nl5048434
Abstract
The success of topological insulators (TI) in creating devices with unique functionalities is directly connected to the ability of coupling their helical spin states to well defined perturbations. However, up to now, TI-based heterostructures always resulted in very disordered interfaces, characterized by strong mesoscopic fluctuations of the chemical potential which make the spin-momentum locking ill-defined over length scales of few nanometers or even completely destroy topological states. These limitations call for the ability to control topological interfaces with atomic precision. Here, we demonstrate that molecular self-assembly processes driven by inherent interactions among the constituents offer the opportunity to create well-defined networks at TIs surfaces. Even more remarkably, we show that the symmetry of the overlayer can be finely controlled by appropriate chemical modifications. By analyzing the influence of the molecules on the TI electronic properties, we rationalize our results in terms of the charge redistribution taking place at the interface. Overall, our approach offers a precise and fast way to produce tailor-made nanoscale surface landscapes. In particular, our findings make organic materials ideal TIs counterparts, since they offer the possibility to chemically tune both electronic and magnetic properties within the same family of molecules, thereby bringing us a significant step closer towards an application of this fascinating class of materials.
arXiv commentNano Letters (2015)
References in corpus (11)
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Inverse Spin-Galvanic Effect in a Topological-Insulator/Ferromagnet Interface
- Surface quantized anomalous Hall current and magneto-electric effect in magnetically disordered topological insulators
- Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
- Electronic and magnetic properties of molecule-metal interfaces: transition metal phthalocyanines adsorbed on Ag(100)
- Reactive chemical doping of the topological insulator
- Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the BiSe Topological Insulator
- Simultaneous quantization of bulk conduction and valence states through adsorption of nonmagnetic impurities on Bi2Se3
- Protection of excited spin states by a superconducting energy gap
- Signatures of Dirac fermion-mediated magnetic order
- Probing the Electronic Properties of Individual MnPc Molecules Coupled to Topological States
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- Superconducting transition of FeSe/SrTiO3 induced by adsorption of semiconducting organic molecules
- Single electron gating of topological insulators
- The role of rare-earth atoms in the anisotropy and antiferromagnetic exchange coupling at a hybrid metal-organic interface