Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3

Abstract

We report on a >100-fold enhancement of Raman responses from Bi2Se3 thin films if laser photon energy switches from 2.33 eV (532 nm) to 1.58 eV (785 nm), which is due to direct optical coupling to Dirac surface states (SS) at the resonance energy of ~1.5 eV (a thickness-independent enhancement) and due to nonlinearly excited Dirac plasmon (a thickness-dependent enhancement). Owing to the direct optical coupling, we observed an in-plane phonon mode of hexagonally arranged Se-atoms associated with a continuous network of Dirac SS. This mode revealed a Fano lineshape for films <15 nm thick, resulting from quantum interference between surface phonon and Dirac plasmon states.

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Cited by in corpus (11)

• Surface vibrational modes of the topological insulator Bi${}_2$Se${}_3$ observed by Raman spectroscopy
• Clarifying ultrafast carrier dynamics in ultrathin films of the topological insulator Bi2Se3 using transient absorption spectroscopy
• Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3
• Resonance-type thickness dependence of optical second harmonic generation in thin-films of the topological insulator Bi2Se3
• Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3
• Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
• Coherent Dirac plasmons in topological insulators
• Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy
• Vibrational Properties of the Bi2Se3 Orthorhombic Metastable Phase
• Comment on 'Unraveling Photoinduced Spin Dynamics in the Topological Insulator Bi2Se3'
• Two-photon IR pumped UV-Vis transient absorption spectroscopy of Dirac fermions in the 2D and 3D topological insulator Bi2Se3