Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3
arXiv:1509.07182 · doi:10.1063/1.4932667
Abstract
Raman measurements of a Fano-type surface phonon mode associated with Dirac surface states (SS) in Bi2Se3 topological insulator thin films allowed an unambiguous determination of the electron-phonon coupling strength in Dirac SS as a function of film thickness ranging from 2 to 40 nm. A non-monotonic enhancement of the electron-phonon coupling strength with maximum for the 8 - 10 nm thick films was observed. The non-monotonicity is suggested to originate from plasmon-phonon coupling which enhances electron-phonon coupling when free carrier density in Dirac SS increases with decreasing film thickness and becomes suppressed for thinnest films when anharmonic coupling between in-plane and out-of-plane phonon modes occurs. The observed about four-fold enhancement of electron-phonon coupling in Dirac SS of the 8 - 10 nm thick Bi2Se3 films with respect to the bulk samples may provide new insights into the origin of superconductivity in this-type materials and their applications.
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Cited by in corpus (9)
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- Nonlinear Optical Observation of Coherent Acoustic Dirac Plasmons in Thin-Film Topological Insulators
- Weakly Interacting Topological Insulators: Quantum Criticality and Renormalization Group Approach
- Surface Phonons in the Topological Insulators Bi2Se3 and Bi2Te3
- A supervised learning algorithm for interacting topological insulators based on local curvature
- Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
- Coherent Dirac plasmons in topological insulators
- Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy
- Two-photon IR pumped UV-Vis transient absorption spectroscopy of Dirac fermions in the 2D and 3D topological insulator Bi2Se3