Effect of carrier recombination on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3
arXiv:1410.6381 · doi:10.1063/1.4901052
Abstract
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper cone of initially unoccupied high energy Dirac surface states (SS) and holes residing in the lower cone of occupied low energy Dirac SS. The modeling of measured TR traces allowed us to conclude that recombination is induced by the depletion of bulk electrons in films below ~20 nm thick due to the charge captured on the surface defects. We predict that such recombination processes can be observed using time-resolved photoluminescence techniques.
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- Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3
- Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3
- Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3
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- Comment on 'Unraveling Photoinduced Spin Dynamics in the Topological Insulator Bi2Se3'
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- Research on topological materials using ultrafast spectroscopy