Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light

Abstract

Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3. The observation of a helicity dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

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Cited by in corpus (6)

• Direct visualization of current induced spin accumulation in topological insulators
• Bilinear magneto-electric resistance as a probe of three-dimensional spin texture in topological surface states
• Spin Hall photoconductance in a 3D topological insulator at room temperature
• Band Structure and Polarization Effects in Photothermoelectric Spectroscopy of a Bi2Se3 Device
• Terahertz electro-optic effect in Bi${}_2$Se${}_3$ crystals
• Controlling helicity-dependent photocurrent in polycrystalline Sb${}_2$Te${}_2$Se topological insulator thin films at ambient temperature through wave-vector of and photothermal gradient due to polarized light