activity
20132016
most citedObservation of inverse spin Hall effect in bismuth selenide

192 citations · 338 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2016★ 30 cited

Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light

Jean Besbas, Karan Banerjee, Jaesung Son +7

Topological insulators (TIs) form a new class of materials with insulating bulk and surface conduction ensured by topologically protected surface states (TPSS). We investigate the…

physics.optics2015

Graphene terahertz modulators by ionic liquid gating

Yang Wu, Chan La-o-vorakiat, Xuepeng Qiu +7

Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating…

cond-mat.mes-hall2015★ 46 cited

Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2

Karan Banerjee, Jaesung Son, Praveen Deorani +3

Absence of backscattering and occurrence of weak anti-localization are two characteristic features of topological insulators. We find that the introduction of defects results in th…

cond-mat.mtrl-sci2015★ 32 cited

Topological Surface States Originated Spin-Orbit Torques in Bi2Se3

Yi Wang, Praveen Deorani, Karan Banerjee +4

Three dimensional topological insulator bismuth selenide (Bi2Se3) is expected to possess strong spin-orbit coupling and spin-textured topological surface states, and thus exhibit a…

cond-mat.mtrl-sci2014★ 192 cited

Observation of inverse spin Hall effect in bismuth selenide

Praveen Deorani, Jaesung Son, Karan Banerjee +4

Bismuth Selenide (Bi2Se3) is a topological insulator exhibiting helical spin polarization and strong spin-orbit coupling. The spin-orbit coupling links the charge current to spin c…

cond-mat.mtrl-sci2013★ 38 cited

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Jaesung Son, Karan Banerjee, Matthew Brahlek +5

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365…