Vibrational Properties of the Bi2Se3 Orthorhombic Metastable Phase

Abstract

Chalcogenides materials are being considered as some of the most promising systems for energy harvesting and energy conversion. Among them, the orthorhombic family of compounds X2Y3 (with X= Bi, Sb and Y= S, Se) has attracted special attention due to its interesting atomic structure, thermoelectric and optical properties. While Bi2S3 and Sb2Se3 have being already applied to solar cells, the new metastable Bi2Se3 is still a challenge due to the lack of data and knowledge on its properties. Here, the vibrational and structural properties of the orthorhombic metastable phase of Bi2Se3 were investigated by using Raman spectroscopy and ab-initio calculations. We perform Raman spectrum measurements along in-situ thermal treatment on samples grown by electrochemical deposition. We show that by increasing the temperature occurs an improved crystallization in the orthorhombic structure, followed by a recrystallization to the usual rhombohedral phase. Our results point out for specific Raman modes of the orthorhombic phase. First principle computational results based on density functional theory support the experimental data and describe three singlet Raman active vibrational modes, Ag1, B2g and Ag2.

17 pages, 2 table, 3 figures

References in corpus (4)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Distribution of phonon lifetime in Brillouin zone
• Thickness tunable quantum interference between surface phonon and Dirac plasmon states in thin-films of the topological insulator Bi2Se3
• Topological Insulator Thin Films Starting from the Amorphous Phase - Bi${}_2$Se${}_3$ as Example