Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

Abstract

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate.

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Cited by in corpus (23)

• Topological Insulator Materials
• Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity
• Current-induced spin polarization in topological insulator-graphene heterostructures
• Optical evidence of surface state suppression in Bi based topological insulators
• Ambipolar Surface Conduction in Ternary Topological Insulator Bi_2(Te_{1-x}Se_x)_3 Nanoribbons
• Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
• Origin of the Electron-Phonon Interaction of Topological Semimetal Surfaces Measured with Helium Atom Scattering
• A Natural Topological Insulator
• Synthesis and characterisation of nanomaterials of the topological crystalline insulator SnTe
• Termination of Single Crystal Bi2Se3 Surfaces Prepared by Various Methods
• Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
• Van der Waals epitaxial growth of topological insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica
• Chemical Potential Fluctuations in Topological Insulator (Bi${}_{0.5}$Sb${}_{0.5}$)${}_2$Te${}_3$ Films Visualized by Photocurrent Spectroscopy
• Phase-coherent transport in catalyst-free vapor phase deposited Bi${}_2$Se${}_3$ crystals
• The true corrugation of a h-BN nanomesh layer
• Spin transfer torques due to the bulk states of topological insulators
• Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators
• Gate field effects on the topological insulator BiSbTeSe2 interface
• Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators
• Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature
• Observation of Dirac Charge Density Waves in Bi${}_2$Te${}_2$Se
• Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
• Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas