Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators
arXiv:2001.04368 · doi:10.1002/pssb.202000021
Abstract
The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due to the unintentional doping. This results in a metallic conduction of the bulk which dominates the transport measurements and hinders the probing of the surface states in these experiments. In this study, we investigate various strategies to reduce the residual doping in Bi-based topological insulators. Flakes of BiSe and BiSbTeSe are grown by physical vapor deposition and their structural and electronic properties are compared to mechanically exfoliated flakes. Using Raman spectroscopy, we explore the role of the substrate in this process and present the optimal conditions for the fabrication of high quality crystals. Despite of this improvement, we show that the vapor phase deposited flakes still suffer from structural disorder which leads to the residual n-type doping of the bulk. Using magneto-measurements we show that exfoliated flakes have better electrical properties and are thus more promising for the probing of surface states.
arXiv comment7 pages, 7 figures
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