Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Abstract

We investigate the ultrafast transient absorption spectrum of Bi2Se3 topological insulator. Bi2Se3 single crystal is grown through conventional solid-state reaction routevia self-flux method. The structural properties have been studied in terms of high-resolution Powder X-ray Diffraction (PXRD). Detailed Rietveld analysis of PXRD of the crystal showed that sample is crystallized in the rhombohedral crystal structure with a space group of R-3m, and the lattice parameters are a=b=4.14A and c=28.7010A. Scanning Electron Microscopy (SEM) result shows perfectly crystalline structure with layered type morphology which evidenced from surface XRD. Energy Dispersive Spectroscopy (EDS) analysis determined quantitative amounts of the constituent atoms, found to be very close to their stoichiometric ratio. Further the fluence dependent nonlinear behaviour is studied by means of ultrafast transient absorption spectroscopy. The ultrafast spectroscopy also predicts the capability of this single crystal to generate Terahertz (THz) radiations (T-rays).

arXiv comment4 Pages Text + Figs Accepted AIP Proceedings

References in corpus (5)

• Topological Insulators
• Topological Insulators in Three Dimensions
• Helical edge and surface states in HgTe quantum wells and bulk insulators
• Strong nonlinear terahertz response induced by Dirac surface states in Bi2Se3 Topological Insulator
• Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metalorganic Chemical Vapor Deposition