Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3

Abstract

Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological insulator Bi_2Se_3, and show that in the 2D quantum limit, in which the topological insulator bulk becomes quantized, an additional negative magnetoresistance feature appears. Detailed analysis associates this feature with weak localization of the quantized bulk channels, providing thus evidence for this quantization. Examination of the dephasing fields at different temperatures indicates different scattering mechanism in the bulk vs the surface states.

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• Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions
• Stable topological insulators achieved using high energy electron beams
• Quantum Interference Theory of Magnetoresistance in Dirac Materials
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• Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators
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• Spin memory of the topological material under strong disorder
• Absence of strong localization at low conductivity in the topological surface state of low disorder Sb2Te3
• Transport in topological insulators with bulk-surface coupling: Interference corrections and conductance fluctuations
• Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi${}_x$Sb${}_{1-x}$)${}_2$Te${}_3$ - EuS Bilayers
• Multi-band character revealed from Weak-antilocalization effect in Platinum thin films
• Signature of pseudo-diffusive transport in mesoscopic topological insulators
• Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping
• Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature
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