Facet Dependent Topological Phase Transition in Bi4Br4
arXiv:2111.11007 · doi:10.1103/PhysRevApplied.17.064017
Abstract
The realization of the coexistence of various topologically nontrivial surface states in one material is expected to lay a foundation for new electric applications with selective robust spin current. Here we apply the magnetoconductivity characteristic and angle-resolved photoemission spectroscopy (ARPES) to visualize the surface-selected electronic features evolution of quasi-one-dimensional material Bi4Br4. The transport measurements indicate the quantum interference correction to conductivity possesses symbolic spin rotational characteristic correlated to the value of Berry phase with the effects of weak localization and weak antilocalization for (001) and (100) surfaces, respectively. The ARPES spectra provide the experimental evidence for quasi-one-dimensional massless Dirac surface state at the side (100) surface and anisotropic massive Dirac surface state at the top (001) surface, respectively, which is highly coincide with the angle-dependent scaling behavior of magnetoconductivity. Our results reveal the facet dependent topological phases in quasi-one-dimensional Bi4Br4, stimulating the further investigations of this dual topology classes and the applications of the feasible technologies of topological spintronics.
References in corpus (11)
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Unexpected mass acquisition of Dirac fermions at the quantum phase transition of a topological insulator
- Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films
- Large-Gap Quantum Spin Hall Insulator in single layer bismuth monobromide BiBr
- Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi
- Purely rotational symmetry-protected topological crystalline insulator -Bi4Br4
- Topological edge states in single- and multi-layer BiBr
- Unconventional transformation of spin Dirac phase across a topological quantum phase transition
- Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Topological Non-Trivial Edge States
Cited by in corpus (9)
- Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4
- Towards Layer-Selective Quantum Spin Hall Channels in Weak Topological Insulator Bi4Br2I2
- Optical bulk-boundary dichotomy in a quantum spin Hall insulator
- Coalescence of multiple topological orders in quasi-one-dimensional bismuth halide chains
- A robust weak topological insulator in a bismuth halide Bi4Br2I2
- Topological Phase Transition in Quasi-One-Dimensional Bismuth Iodide Bi4I4
- Mass Acquisition of Dirac Fermions in Bi4I4 by Spontaneous Symmetry Breaking
- Field manipulation of Weyl modes in an ideal Dirac semimetal
- Quantum Coherent Transport of 1D ballistic states in second order topological insulator BiBr