Signature of pseudo-diffusive transport in mesoscopic topological insulators
arXiv:1904.06509 · doi:10.1103/PhysRevResearch.2.033019
Abstract
One of the unique features of Dirac Fermions is pseudo-diffusive transport by evanescent modes at low Fermi energies when the disorder is low. At higher Fermi energies i.e. carrier densities, the electrical transport is diffusive in nature and the propagation occurs via plane-waves. In this study, we report the detection of such evanescent modes in the surface states of topological insulator through 1/f noise. While signatures of pseudo-diffusive transport have been seen experimentally in graphene, such behavior is yet to be observed explicitly in any other system with a Dirac dispersion. To probe this, we have studied 1/f noise in topological insulators as a function of gate-voltage, and temperature. Our results show a non-monotonic behavior in 1=f noise as the Fermi energy is varied, suggesting a crossover from pseudo-diffusive to diffusive transport regime in mesoscopic topological insulators. The temperature dependence of noise points towards conductance fluctuations from quantum interference as the dominant source of the noise in these samples.
arXiv comment5 pages, 4 figures
References in corpus (44)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Topological Insulators
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Bipolar supercurrent in graphene
- Topological Surface States Protected From Backscattering by Chiral Spin Texture
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Colloquium: The transport properties of graphene: An introduction
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- Quantum-limited shot noise in graphene
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Phase Coherent Transport of Charges in Graphene Quantum Billiard
- Zitterbewegung, chirality, and minimal conductivity in graphene
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
- Thickness-independent transport channels in topological insulator Bi2Se3 thin films
- The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene
- Observation of Dirac Holes and Electrons in a Topological Insulator
- Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
- Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime
- Josephson effect in ballistic graphene
- Broken symmetry states and divergent resistance in suspended bilayer graphene
- Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
- Giant Nonlocality near the Dirac Point in Graphene
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Josephson Current and Multiple Andreev Reflections in Graphene SNS Junctions
- Crystal Structure and Chemistry of Topological Insulators
- Shot Noise in Ballistic Graphene
- Shot Noise in Graphene
- Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
- Current crowding mediated large contact noise in graphene field-effect transistors
- Universal conductance fluctuations in Dirac materials in the presence of long-range disorder
- 2D transport and screening in topological insulator surface states
- Subharmonic gap structure in short ballistic graphene junctions
- Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3
- Pseudo-ballistic transport in 3D topological insulator quantum wires
- Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene
- Low temperature saturation of phase coherence length in topological insulators
- Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators
- Universal conductance fluctuations and direct observation of crossover of symmetry classes in topological insulators
- Signatures of evanescent transport in ballistic suspended graphene superconductor junctions