Subharmonic gap structure in short ballistic graphene junctions

Abstract

We present a theoretical analysis of the current-voltage characteristics of a ballistic superconductor-normal-superconductor (SNS) junction, in which a strip of graphene is coupled to two superconducting electrodes. We focus in the short-junction regime, where the length of the strip is much smaller than superconducting coherence length. We show that the differential conductance exhibits a very rich subharmonic gap structure which can be modulated by means of a gate voltage. On approaching the Dirac point the conductance normalized by the normal-state conductance is identical to that of a short diffusive SNS junction.

revtex4, 4 pages, 4 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Quantum-limited shot noise in graphene
• Specular Andreev reflection in graphene
• Josephson effect in ballistic graphene
• Minimal conductivity in bilayer graphene

Cited by in corpus (8)

• Suspended Graphene: a bridge to the Dirac point
• Andreev reflection and Klein tunneling in graphene
• Josephson Current and Multiple Andreev Reflections in Graphene SNS Junctions
• Proximity Induced Superconductivity and Multiple Andreev Reflections in Few-Layer-Graphene
• Photon-assisted electron transport in graphene
• Andreev reflection in graphene nanoribbons
• Microscopic theory of the proximity effect in superconductor-graphene nanostructures
• Pseudo-diffusive magnetotransport in graphene