Crossover between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Abstract

We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of B// and I, signifying intrinsic spin-orbit coupling in the Bi2Se3 films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.

References in corpus (8)

• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
• Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
• Linear magnetoresistance on the topological surface
• Parallel field magnetoresistance in topological insulator thin films
• Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure
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