Surface-to-bulk scattering in topological insulator films

Abstract

We present a quantitative microscopic theory of the disorder- and phonon-induced coupling between surface and bulk states in topological insulator (TI) films. We find a simple structure for the surface-to-bulk scattering matrix elements and confirm the importance of bulk-surface coupling in transport and photoemission experiments, assessing its dependence on temperature, carrier density, film thickness and particle-hole asymmetry.

5 pages+appendices, 8 figures

References in corpus (10)

• Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
• Finite size effects of helical edge states in HgTe/CdTe quantum wells
• Quantum interference and Aharonov-Bohm oscillations in topological insulators
• Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
• Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
• Electron-phonon scattering in topological insulators
• Optical evidence of surface state suppression in Bi based topological insulators
• Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
• Hot-carrier transport and spin relaxation on the surface of topological insulator
• The Coexistence and Decoupling of Bulk and Edge States in Disordered Two-dimensional Topological Insulators

Cited by in corpus (3)

• Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
• FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance
• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals