Surface-to-bulk scattering in topological insulator films
arXiv:1409.6291 · doi:10.1103/PhysRevB.90.245418
Abstract
We present a quantitative microscopic theory of the disorder- and phonon-induced coupling between surface and bulk states in topological insulator (TI) films. We find a simple structure for the surface-to-bulk scattering matrix elements and confirm the importance of bulk-surface coupling in transport and photoemission experiments, assessing its dependence on temperature, carrier density, film thickness and particle-hole asymmetry.
arXiv comment5 pages+appendices, 8 figures
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- Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states
- Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
- Origin and evolution of surface spin current in topological insulators
- Linear magnetoresistance and surface to bulk coupling in topological insulator thin films
- FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance
- Gate-induced decoupling of surface and bulk state properties in selectively-deposited BiTe nanoribbons
- Stability of topological properties of bismuth (111) bilayer
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- Size Constraints on Majorana Beamsplitter Interferometer: Majorana Coupling and Surface-Bulk Scattering
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- Logarithmic singularities and quantum oscillations in magnetically doped topological insulators
- Dynamics of impurity in the environment of Dirac fermions
- Topological surface states hybridized with bulk states of Bi-doped PbSb2Te4 revealed in quasiparticle interference