Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)

Abstract

Since last few years, research based on topological insulators (TI) is in great interests due to intrinsic exotic fundamental properties and future potential applications such as quantum computers or spintronics. The fabrication of TI nanodevices and study on their transport properties mostly focused on high quality crystalline nanowires or nanoribbons. Here we report robust approach of Bi2Se3 nanowire formation from deposited flakes using ion beam milling method. The fabricated Bi2Se3 nanowire devices have been employed to investigate the robustness of topological surface state (TSS) to gallium ion doping and any deformation in the material due to fabrication tools. We report the quantum oscillations in magnetoresistance curves under the parallel magnetic field. The resistance versus magnetic field curves have been studied and compared with Aharonov-Bohm (AB) interference effects which further demonstrate the transport through TSS. The fabrication route and observed electronic transport properties indicate clear quantum oscillations and can be exploited further in studying the exotic electronic properties associated with TI based nanodevices.

arXiv comment14 pages, 5 figures, accepted in JPCM

References in corpus (21)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Aharonov-Bohm interference in topological insulator nanoribbons
• Experimental demonstration of the topological surface states protected by the time-reversal symmetry
• Topological Phase Transition and Texture Inversion in a Tunable Topological Insulator
• Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
• Topological Insulator Nanowires and Nanoribbons
• Aharonov-Bohm effect in graphene
• Aharonov-Bohm oscillations in disordered topological insulator nanowires
• Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
• Anomalous Aharonov-Bohm conductance oscillations from topological insulator surface states
• Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires
• One-dimensional helical transport in topological insulator nanowire interferometers
• Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons
• Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi
• New interpretation of the origin of 2DEG states at the surface of layered topological insulators
• Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3
• Interaction-induced dephasing of Aharonov-Bohm oscillations
• Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2
• Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance
• Aharonov-Bohm Oscillations in Singly-Connected Disordered Conductors

Cited by in corpus (5)

• Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions
• Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies
• Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3
• Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires
• Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature