Magneto-transport Effects in Topological Insulator BiSe Nanoribbons
arXiv:1003.6099
Abstract
Magneto-resistance (MR) of BiSe nanoribbons is studied over a broad range of temperature (=300K-2K) and under various magnetic field () orientations. The MR is strongly anisotropic with the perpendicular MR much larger than the longitudinal and transverse MRs. The perpendicular MR exhibits quadratic -dependence in low fields and becomes linear at high . However, when increases, the perpendicular MR becomes linear over the whole magnetic field range (0-9T) up to room temperature. This unusual linear MR is discussed in the context of the linear quantum MR of the topological surface-states. We also observe the boundary-scattering effect in MR at low temperatures, which indicates that the out-of-plane Fermi momentum is much smaller the in-plane Fermi momentum, excluding the simple three-dimensional Fermi surface picture.
comments are welcome
References in corpus (8)
- Topological Insulators
- Topological origin of subgap conductance in insulating bilayer graphene
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Bulk Fermi surface coexistence with Dirac surface state in BiSe: a comparison of photoemission and Shubnikov-de Haas measurements
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
- Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface
- Ambipolar Electric Field Effect in Metallic Bi2Se3