169 citations · 320 across the 12 of their papers we have counts for
12 papers
Monolithic Germanium Tin on Si Avalanche Photodiodes
Justin Rudie, Sylvester Amoah, Xiaoxin Wang +8
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to…
Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar +6
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. D…
3D Nanoscale Mapping of Short-Range Order in GeSn Alloys
Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang +5
GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretic…
Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors
Oussama Moutanabbir, Simone Assali, Xiao Gong +9
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant th…
Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics
Grey Abernathy, Yiyin Zhou, Solomon Ojo +8
The recent progress on (Si)GeSn optoelectronic devices holds a great promising for photonic integration on the Si substrate. In parallel to the development of bulk devices, the (Si…
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
P. C. Grant, W. Dou, B. Alharthi +9
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…
Exfoliation energy, quasi-particle bandstructure, and excitonic properties of selenium and tellurium atomic chains
Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo +3
Effects that are not captured by the generalized-gradient density-functional theory play a prominent effect on the structural binding, and on the electronic and optical properties…
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan +11
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on b…