169 citations · 320 across the 12 of their papers we have counts for
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Monolithic Germanium Tin on Si Avalanche Photodiodes
Justin Rudie, Sylvester Amoah, Xiaoxin Wang +8
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to…
3D Nanoscale Mapping of Short-Range Order in GeSn Alloys
Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang +5
GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretic…
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
P. C. Grant, W. Dou, B. Alharthi +9
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan +11
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on b…