5 papers
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Justin Rudie, Xiaoxin Wang, Rajesh Kumar +9
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) struct…
Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
Jie Zhou, Daniel Vincent, Sudip Acharya +16
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in laser performance have been b…
Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
Yang Liu, Jiarui Gong, Sudip Acharya +12
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequa…
AlGaAs/GeSn p-i-n diode interfaced with ultrathin AlO
Yang Liu, Yiran Li, Sudip Acharya +9
This study presents the fabrication and characterizations of an AlGaAs/GeSn/GeSn p-i-n double heterostructure (DHS) diode following the grafting a…