Coulomb drag in topological insulator films
arXiv:1601.02291 · doi:10.1016/j.physe.2015.11.027
Abstract
We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the electron-electron interaction in detail in order to recover all terms responsible for Coulomb drag. Focusing on typical topological insulator systems, with film thicknesses d up to 6 nm, we obtain numerical and approximate analytical results for the drag resistivity and find that is proportional to at low temperature T and low electron density , with a denoting the active layer and p the passive layer. In addition, we compare with graphene, identifying qualitative and quantitative differences, and we discuss the multi valley case, ultra thin films and electron-hole layers.
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Cited by in corpus (8)
- Coulomb drag
- Inter-band Coherence Response to Electric Fields in Crystals
- Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions
- Quantum Transport in Weyl Semimetal Thin Films in the Presence of Spin-Orbit Coupled Impurities
- Anomalous Hall Coulomb drag of massive Dirac fermions
- Coulomb drag in topological materials
- Performance of the T-matrix based master equation for Coulomb drag in double quantum dots
- Dynamical density response and collective modes of topological insulator ultra-thin films