Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

Abstract

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point the carrier density is strongly temperature dependent reflecting thermal activation from the nearby bulk valence band, while above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime linear resistivity vs. temperature reflects intrinsic electron-acoustic phonon scattering. Quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF = 4.7 Å-1. This strong phonon scattering in the Bi2Se3 surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm2/Vs.

arXiv comment15 pages, 3 figures, minor revision (version 2)

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Cited by in corpus (24)

• First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
• Quantum frequency doubling in the topological insulator Bi2Se3
• High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu${}_{0.02}$Bi${}_2$Se${}_3$
• Ambipolar Surface State Thermoelectric Power of Topological Insulator Bi2Se3
• Fingerprints of Inelastic Transport at the Surface of the Topological Insulator Bi2Se3: Role of Electron-Phonon Coupling
• Optical evidence of surface state suppression in Bi based topological insulators
• Many-body effects and possible superconductivity in the 2D metallic surface states of 3D topological insulators
• Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs
• Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3
• Weakly Interacting Topological Insulators: Quantum Criticality and Renormalization Group Approach
• Two-dimensional electronic transport on the surface of 3D topological insulators
• Interaction and disorder effects in 3D topological insulator thin films
• Absence of Magnetic Fluctuations in the Ferromagnetic/Topological Heterostructure EuS/Bi${}_2$Se${}_3$
• Screening, Friedel oscillations and low-temperature conductivity in topological insulator thin films
• A supervised learning algorithm for interacting topological insulators based on local curvature
• Suppression of the Kondo Resistivity Minimum in Magnetic Topological Insulators
• Anomalous Hall Coulomb drag of massive Dirac fermions
• Ambipolar surface state transport in non-metallic stoichiometric Bi${}_2$Se${}_3$ crystals
• Temperature Dependent n-p Transition of 3 Dimensional Dirac Semimetal Na${}_3$Bi Thin Film
• Non-contact mutual inductance based measurement of an inhomogeneous topological insulating state in Bi2Se3 single crystals with defects
• Coulomb drag in topological insulator films
• Phase diagram and phonon-induced backscattering in topological insulator nanowires
• Erasable superconductivity in topological insulator Bi2Se3 induced by voltage pulse
• Ultrafast switching of topological invariants by light-driven strain