Coulomb drag in graphene single layers separated by a thin spacer

Abstract

Motivated by very recent studies of Coulomb drag in grahene-BN-graphene system we develop a theory of Coulomb drag for the Fermi liquid regime, for the case when the ratio of spacer thickness $d$ to the Fermi wavelength of electrons is arbitrary. The concentration ($n$) and thickness dependence of the drag resistivity is changed from $n^{-3}{d}^{-4}$ for the thick spacer to $n^{-1}|\ln (n{d}^2)|$ for the thin one.

final version; more details on the solution of electrostatic problem and some references are added

References in corpus (6)

• The electronic properties of graphene
• Dynamical polarization of graphene at finite doping
• Coulomb Drag in the Exciton Regime in Electron-Hole Bilayers
• Coulomb Drag in Graphene
• Coulomb Drag and High Resistivity Behavior in Double Layer Graphene
• Electron-electron interactions in decoupled graphene layers