Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi${}_2$Te${}_3$

Abstract

We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd${}_x$Bi${}_2$Te${}_3$ (0 $\le$ x $\le$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm${}^2$V${}^{-1}$s${}^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi${}_2$Te${}_3$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi${}_2$Te${}_3$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.

18 pages, 16 figures

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Cited by in corpus (2)

• Anisotropic Light-Matter Interactions in Single Crystal Topological Insulator Bismuth Selenide
• Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator