Spin-charge coupled transport in van der Waals systems with random tunneling
arXiv:1904.01015 · doi:10.1103/PhysRevResearch.1.033085
Abstract
We study the electron and spin transport in a van der Waals system formed by one layer with strong spin-orbit coupling and a second layer without spin-orbit coupling, in the regime when the interlayer tunneling is random. We find that in the layer without intrinsic spin-orbit coupling spin-charge coupled transport can be induced by two distinct mechanisms. First, the gapless diffusion modes of the two isolated layers hybridize in the presence of tunneling, which constitutes a source of spin-charge coupled transport in the second layer. Second, the random tunneling introduces spin-orbit coupling in the effective disorder-averaged single-particle Hamiltonian of the second layer. This results in non-trivial spin transport and, for sufficiently strong tunneling, in spin-charge coupling. As an example, we consider a van der Waals system formed by a two-dimensional electron gas (2DEG)--such as graphene--and the surface of a topological insulator (TI) and show that the proximity of the TI induces a coupling of the spin and charge transport in the 2DEG. In addition, we show that such coupling can be tuned by varying the doping of the TI's surface. We then obtain, for a simple geometry, the current-induced non-equilibrium spin accumulation (Edelstein effect) caused in the 2DEG by the coupling of charge and spin transport.
arXiv comment5+1 pages, 1 figure
References in corpus (30)
- Topological Insulators
- Topological insulators and superconductors
- Spintronics: Fundamentals and applications
- Van der Waals heterostructures
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- 2D materials and van der Waals heterostructures
- Moire bands in twisted double-layer graphene
- Tuning superconductivity in twisted bilayer graphene
- Graphene bilayer with a twist: electronic structure
- Highly confined low-loss plasmons in graphene-boron nitride heterostructures
- Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
- Theory of Spin-Charge Coupled Transport in a Two-Dimensional Electron Gas with Rashba Spin-Orbit Interactions
- Spin and Charge Transport on the Surface of a Topological Insulator
- Van der Waals spin valves
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Graphene-based topological insulator with an intrinsic bulk band gap above room temperature
- Proximity effect in graphene-topological insulator heterostructures
- A Gapless MoS Allotrope Possessing Both Massless Dirac and Heavy Fermions
- Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
- Proximity-induced giant spin-orbit interaction in epitaxial graphene on topological insulator
- Spin-Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip
- Giant Edelstein effect in Topological-Insulator--Graphene heterostructures
- Boundary conditions for spin diffusion
- Theory of coupled spin-charge transport due to spin-orbit interaction in inhomogeneous two-dimensional electron liquids
- Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy
- Boundary spin Hall effect in a two-dimensional semiconductor system with Rashba spin-orbit coupling
- Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions
- Ground state of graphene heterostructures in the presence of random charged impurities
- Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
- Transport in topological insulators with bulk-surface coupling: Interference corrections and conductance fluctuations