activity
20162022
most citedDFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

20 citations · 26 across the 2 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2022★ 6 cited

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain and Layer Engineering

Nupur Navlakha, Priyamvada Jadaun, Leonard F. Register +1

The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Bl…

cond-mat.mes-hall2018

Tunable Valley Populations in Hole-Doped Trilayer WSe

Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad +7

We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe. Shubnikovde Haas oscillations show that trilayer holes p…

cond-mat.mes-hall2017

Detection of current induced spin polarization in epitaxial BiTe thin film

Rik Dey, Anupam Roy, Tanmoy Pramanik +5

We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown BiTe thin film in a two-terminal device with a ferromagnetic…

cond-mat.mes-hall2017

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe

Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim +5

We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe. The QHSs sequence transitions between predominantly even and predominantly odd f…

cond-mat.mes-hall2016★ 20 cited

DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc +1

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ chan…

physics.data-an2016

Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement

Urmimala Roy, Tanmoy Pramanik, Leonard F. Register +1

Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endu…