Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

Abstract

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.

Accepted for publication in Journal of Applied Physics

References in corpus (4)

• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

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