activity
20082020
most citedBallistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

84 citations · 417 across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.mtrl-sci2020

Large spin Hall effect in 5d-transition metal anti-perovskites

Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee

The spin Hall effect (SHE) is highly promising for spintronic applications, and the design of materials with large SHE can enable ultra-low power memory technology. Recently, 5d-tr…

cond-mat.mtrl-sci2019★ 36 cited

Rational design principles for giant spin Hall effect in 5d-transition metal oxides

Priyamvada Jadaun, Leonard F Register, Sanjay K Banerjee

Spin Hall effect (SHE), a mechanism by which materials convert a \textit{charge} current into a \textit{spin} current, invokes interesting physics and promises to empower transform…

cond-mat.mtrl-sci2019★ 50 cited

The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers

Priyamvada Jadaun, Leonard F Register, Sanjay K Banerjee

Skyrmions are widely regarded as promising candidates for emergent spintronic devices. Dzyaloshinskii-Moriya interaction (DMI) is often critical to the generation and manipulation…

cond-mat.mes-hall2016★ 20 cited

DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs

Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc +1

Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ chan…

physics.data-an2016★ 32 cited

Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement

Urmimala Roy, Tanmoy Pramanik, Leonard F. Register +1

Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endu…

cond-mat.mes-hall2016★ 5 cited

Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

Sarmita Majumder, Samaresh Guchhait, Rik Dey +2

We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the ma…