48 citations · 113 across the 4 of their papers we have counts for
5 papers
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…
Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
Jiwon Chang
Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional (2-D) materials monolayer HfS2 and phosphor…
Theoretical Study of Phosphorene Tunneling Field Effect Transistors
Jiwon Chang, Chris Hobbs
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosp…
Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies…
Intrinsic and extrinsic perturbations on the topological insulator Bi2Se3 surface states
Jiwon Chang, Priyamvada Jadaun, Leonard F. Register +2
Using a density functional based electronic structure method, we study the effect of perturbations on the surface state Dirac cone of a strong topological insulator BiSe fr…