218 citations · 658 across the 11 of their papers we have counts for
11 papers
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…
Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
Jiwon Chang
Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional (2-D) materials monolayer HfS2 and phosphor…
Theoretical Study of Phosphorene Tunneling Field Effect Transistors
Jiwon Chang, Chris Hobbs
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosp…
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS on oxide
Amithraj Valsaraj, Jiwon Chang, Amritesh Rai +2
Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS layers on dielectrics, in particular in this…
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballist…
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
Jiwon Chang, Stefano Larentis, Emanuel Tutuc +2
Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dic…