Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs

Abstract

Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional (2-D) materials monolayer HfS2 and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS2 is comprehensively analyzed. Benchmarking monolayer HfS2 with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS2 than in phosphorene due to the degenerate CB valleys of monolayer HfS2. Our simulations also reveal that, at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS2 MOSFETs in terms of the onstate current. However, it is observed that monolayer HfS2 MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

Accepted for publication in Journal of Applied Physics

References in corpus (8)

• Two Dimensional Atomic Crystals
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
• Two dimensional semiconductors with possible high room temperature mobility
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• Performance limits projection of black phosphorous field-effect transistors
• Theoretical Study of Phosphorene Tunneling Field Effect Transistors