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Tunable Valley Populations in Hole-Doped Trilayer WSe
Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad +7
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe. Shubnikovde Haas oscillations show that trilayer holes p…
Detection of current induced spin polarization in epitaxial BiTe thin film
Rik Dey, Anupam Roy, Tanmoy Pramanik +5
We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown BiTe thin film in a two-terminal device with a ferromagnetic…
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe
Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim +5
We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe. The QHSs sequence transitions between predominantly even and predominantly odd f…
DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs
Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc +1
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ chan…
Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts
Sarmita Majumder, Samaresh Guchhait, Rik Dey +2
We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the ma…
Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications
Bahniman Ghosh, Rik Dey, Leonard F. Register +1
In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating…
A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems
Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang +2
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the…
Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe: Landau level degeneracy, effective mass, and negative compressibility
Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim +5
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall…
Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva +1
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered,…
High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors
Hema C. P. Movva, Amritesh Rai, Sangwoo Kang +6
We demonstrate dual-gated -type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe) using high work-function platinum source/drain contacts, and a h…
Quantum transport simulation of exciton condensate transport physics in a double layer graphene system
Xuehao Mou, Leonard F. Register, Allan H. MacDonald +1
Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semicon…
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad, Kayoung Lee, Sangwoo Kang +10
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphen…
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS on oxide
Amithraj Valsaraj, Jiwon Chang, Amritesh Rai +2
Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS layers on dielectrics, in particular in this…
Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator
Bahniman Ghosh, Rik Dey, Leonard F. Register +1
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular a…
Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions
Bahniman Ghosh, Urmimala Roy, Rik Dey +3
In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the si…
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballist…
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
Jiwon Chang, Stefano Larentis, Emanuel Tutuc +2
Using an ab initio density functional theory (DFT) based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dic…
Atomistic Full-Band Simulations of Monolayer MoS2 Transistors
Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee
We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport…
Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications
Priyamvada Jadaun, Hema C. P. Movva, Leonard F. Register +1
Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiS…
Density functional theory studies of interactions of graphene with its environment: substrate, gate dielectric and edge effects
Priyamvada Jadaun, Bhagawan R. Sahu, Leonard F. Register +1
This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrat…
Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure
Seyoung Kim, Insun Jo, D. C. Dillen +5
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers…
Coulomb Drag of Massless Fermions in Graphene
Seyoung Kim, Insun Jo, Junghyo Nah +3
Using a novel structure, consisting of two, independently contacted graphene single layers separated by an ultra-thin dielectric, we experimentally measure the Coulomb drag of mass…