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DFT Simulations of Inter-Graphene-Layer Coupling with Rotationally Misaligned hBN Tunnel Barriers in Graphene/hBN/Graphene Tunnel FETs
Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc +1
Van der Waal's heterostrucutures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ chan…
Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement
Urmimala Roy, Tanmoy Pramanik, Leonard F. Register +1
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endu…
Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts
Sarmita Majumder, Samaresh Guchhait, Rik Dey +2
We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the ma…
Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications
Bahniman Ghosh, Rik Dey, Leonard F. Register +1
In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating…
A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems
Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang +2
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the…
Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy
Anupam Roy, Hema C. P. Movva, Biswarup Satpati +7
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analys…
Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe: Landau level degeneracy, effective mass, and negative compressibility
Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim +5
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall…
Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva +1
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered,…